Signatures for doubly-charged Higgsinos at colliders

Several supersymmetric models with extended gauge structures predict light doubly-charged Higgsinos. Their distinctive signature at the large hadron collider is highlighted by studying their production and decay characteristics.Comment: 3 pages, 4 figures, Latex. Submitted for SUSY 2008 proceeding

Simulating the Effect of the Climate Change, Genotypes and Management on the Productivity of Forage Cowpea in Semi-Arid Regions of India

Climate variability and change due to increase in green house gases concentration and the resultant increase in temperature has led to notable changes in different sectors including water and agriculture which would impact food security (Rai et al., 2014) in many regions of the developing world, which are largely dependent on rainfed and labor intensive agricultural production (Ziervogel and Calder, 2003). Eco-physiological models are widely used especially the potential impacts of climate change (Gitay et al., 2001; White et al., 2011). The cowpea (Vigna unguiculata (L.) Walp.) is an annual herbaceous legume cultivated for its edible seeds or for fodder. It is an obvious choice for intercropping with forage cereals like sorghum, maize and pearl millet in all growing region of India. The fresh fodder has 15-20 % CP content and being legume it fixes nitrogen in the soil which makes more suitable for rainfed marginal lands. In this context, CROPGRO- model calibrated and validated for forage cowpea and this was employed for assessing the impact of climate change as well as analyzing the climatic risk of forage cow pea production

Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act as strong non-radiative recombination centers, while others are efficient radiative recombination centers. We characterize luminescence bands in GaAs due to dislocations, stacking faults, and pairs of stacking faults. These results indicate that low-temperature, spatially-resolved photoluminescence imaging can be a powerful tool for identifying luminescence bands of extended defects. This mapping could then be used to identify extended defects in other GaAs samples solely based on low-temperature photoluminescence spectra.Comment: 4 pages, 4 figure

Oxy-Ti(IV) Dicarboxylates

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